to ? 126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors bd034 transistor (pnp) features z high transition frequency z high collector current maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -110 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -95 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -7 v collector cut-off current i cbo v cb =-100v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a h fe(1) v ce =-2v, i c =-100ma 100 560 dc current gain h fe(2) v ce =-2v, i c =-1.5a 40 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-200ma -0.5 v base-emitter voltage v be v ce =-5v, i c =-500ma -1 v transition frequency f t v ce =-1v,i c =-250ma, f=1mhz 3 mhz classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 symbol parameter value unit v cbo collector-base voltage -110 v v ceo collector-emitter voltage -95 v v ebo emitter-base voltage -7 v i c collector current -2.5 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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